FQPF18N20V2
MOSFET N-CH 200V 18A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF18N20V2 is a 200 V N-Channel Power MOSFET designed for demanding applications. This device offers a continuous drain current of 18A at 25°C and a maximum power dissipation of 40W. Key electrical characteristics include a low on-resistance of 140mOhm at 9A and 10V, and a gate charge of 26 nC at 10V. The input capacitance (Ciss) is specified at 1080 pF at 25V. This through-hole component is housed in a TO-220F-3 package, suitable for robust thermal management. Operating across a temperature range of -55°C to 150°C, the FQPF18N20V2 finds utility in power supplies, motor control, and general switching applications where high voltage and current handling are critical.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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