FQPF17P06
MOSFET P-CH 60V 12A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series P-channel MOSFET FQPF17P06. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 12A at 25°C. The Rds On is specified at a maximum of 120mOhm at 6A and 10V gate drive. With a total power dissipation of 39W at 25°C (Tc), this MOSFET is designed for efficient power switching. Key parameters include a Gate Charge (Qg) of 27 nC maximum at 10V and an Input Capacitance (Ciss) of 900 pF maximum at 25V. The FQPF17P06 utilizes a TO-220F-3 through-hole package, suitable for applications requiring robust thermal performance. It operates across a temperature range of -55°C to 175°C (TJ). This component finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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