FQPF16N25
MOSFET N-CH 250V 9.5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF16N25 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 9.5A at 25°C (Tc). With a maximum power dissipation of 50W (Tc) and a low on-resistance (Rds On) of 230mOhm at 4.75A and 10V gate drive, it ensures minimal conduction losses. The device features a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V, facilitating efficient switching. The TO-220F-3 package with through-hole mounting is suitable for power supply units, motor control, and general-purpose power switching across various industrial sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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