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FQPF16N25

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FQPF16N25

MOSFET N-CH 250V 9.5A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's QFET® series FQPF16N25 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 9.5A at 25°C (Tc). With a maximum power dissipation of 50W (Tc) and a low on-resistance (Rds On) of 230mOhm at 4.75A and 10V gate drive, it ensures minimal conduction losses. The device features a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V, facilitating efficient switching. The TO-220F-3 package with through-hole mounting is suitable for power supply units, motor control, and general-purpose power switching across various industrial sectors. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 4.75A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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