FQPF13N50
MOSFET N-CH 500V 12.5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQPF13N50 is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 12.5A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 430mOhm maximum at 6.25A, 10V, and a maximum gate charge (Qg) of 60 nC at 10V. With a maximum power dissipation of 56W (Tc), it is suitable for demanding power management solutions. The FQPF13N50 utilizes a TO-220F-3 through-hole package, facilitating integration into various circuit designs. Typical applications include power supplies, lighting, and motor control systems where robust high-voltage performance is critical.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 6.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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