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FQPF13N50

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FQPF13N50

MOSFET N-CH 500V 12.5A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's QFET® series FQPF13N50 is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 12.5A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 430mOhm maximum at 6.25A, 10V, and a maximum gate charge (Qg) of 60 nC at 10V. With a maximum power dissipation of 56W (Tc), it is suitable for demanding power management solutions. The FQPF13N50 utilizes a TO-220F-3 through-hole package, facilitating integration into various circuit designs. Typical applications include power supplies, lighting, and motor control systems where robust high-voltage performance is critical.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.5A (Tc)
Rds On (Max) @ Id, Vgs430mOhm @ 6.25A, 10V
FET Feature-
Power Dissipation (Max)56W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V

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