FQPF13N10
MOSFET N-CH 100V 8.7A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQPF13N10 is a QFET® series N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 8.7A at 25°C. The on-resistance (Rds On) is a maximum of 180mOhm at 4.35A and 10V gate drive voltage. With a maximum power dissipation of 30W (Tc), it is housed in a TO-220F-3 package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 450 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This device is commonly utilized in power supply applications, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 4.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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