FQPF12N60
MOSFET N-CH 600V 5.8A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQPF12N60 is a QFET® series N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 5.8A at 25°C, with a maximum power dissipation of 55W (Tc). The Rds On is specified at 700mOhm maximum at 2.9A and 10V gate drive. Key electrical parameters include input capacitance (Ciss) of 1900pF (Max) at 25V and gate charge (Qg) of 54nC (Max) at 10V. This MOSFET is housed in a TO-220F-3 package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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