FQP9N15
MOSFET N-CH 150V 9A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP9N15 is an N-Channel Power MOSFET from the QFET® series, designed for demanding power applications. This TO-220-3 packaged component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 9A at 25°C. With a maximum power dissipation of 75W (Tc) and a low Rds On of 400mOhm at 4.5A and 10V, it offers efficient switching performance. Key parameters include a Gate Charge (Qg) of 13 nC at 10V and an Input Capacitance (Ciss) of 410 pF at 25V. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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