FQP9N08
MOSFET N-CH 80V 9.3A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP9N08 is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 9.3A at 25°C. The Rds On is specified at a maximum of 210mOhm at 4.65A and 10V gate drive. With a maximum power dissipation of 40W (Tc), it is suitable for applications requiring efficient switching. Key parameters include Input Capacitance (Ciss) of 250pF at 25V and Gate Charge (Qg) of 7.7 nC at 10V. The device is housed in a TO-220-3 package and supports through-hole mounting. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in power supply, motor control, and automotive applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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