FQP7P20
MOSFET P-CH 200V 7.3A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® P-Channel Power MOSFET, FQP7P20. This device features a 200 V drain-source breakdown voltage and a continuous drain current capability of 7.3 A at 25°C (Tc). With a maximum power dissipation of 90 W (Tc), it is suitable for demanding applications. The TO-220-3 package facilitates through-hole mounting. Key parameters include a maximum Rds On of 690 mOhm at 3.65 A and 10 V gate drive, a gate charge of 25 nC at 10 V, and an input capacitance of 770 pF at 25 V. The threshold voltage is specified at 5 V for 250 µA. Operating temperature range is -55°C to 150°C. This component is utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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