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FQP7N80

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FQP7N80

MOSFET N-CH 800V 6.6A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FQP7N80 is an N-Channel Power MOSFET from the QFET® series. This through-hole component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 6.6 A at 25°C. It offers a maximum on-resistance (Rds On) of 1.5 Ohm at 3.3 A and 10 V gate drive, with a maximum power dissipation of 167 W (Tc). The device has a gate charge (Qg) of 52 nC (Max) at 10 V and input capacitance (Ciss) of 1850 pF (Max) at 25 V. Operating temperature range is -55°C to 150°C (TJ). The TO-220-3 package is supplied in a tube. This MOSFET is suitable for applications in power supply, lighting, and industrial motor control.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 3.3A, 10V
FET Feature-
Power Dissipation (Max)167W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 25 V

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