FQP7N65C
MOSFET N-CH 650V 7A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP7N65C is a QFET® series N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.4 Ohms at 3.5A, 10V, with a gate charge (Qg) of 36 nC at 10V. It has a maximum power dissipation of 160W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). The TO-220-3 package is suitable for power switching applications in industries such as industrial power supplies, lighting, and motor control. The input capacitance (Ciss) is 1245 pF at 25V, and the gate-source breakdown voltage (Vgs(th)) is 4V at 250µA.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1245 pF @ 25 V |
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