FQP70N08
MOSFET N-CH 80V 70A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP70N08 is an N-Channel QFET® MOSFET designed for high-performance switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 70A at 25°C, with a maximum power dissipation of 155W (Tc). The Rds On is specified at a maximum of 17mOhm at 35A and 10V gate drive. Key parameters include a gate charge (Qg) of 98 nC (max) at 10V and input capacitance (Ciss) of 2700 pF (max) at 25V. The operating temperature range is from -55°C to 175°C (TJ). This device is commonly utilized in power supply designs, motor control, and automotive electronics. The TO-220-3 package facilitates robust thermal management.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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