FQP6P25
MOSFET P-CH 250V 6A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP6P25 is a P-Channel QFET® MOSFET with a Drain-Source Voltage (Vdss) of 250V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current (Id) of 6A at 25°C and a maximum power dissipation of 90W (Tc). The Rds On is specified at a maximum of 1.1 Ohm at 3A, 10V. Key parameters include a gate charge (Qg) of 27 nC @ 10V and input capacitance (Ciss) of 780 pF @ 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 5V @ 250µA. This MOSFET is suitable for applications in power supply units and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
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