FQP6N25
MOSFET N-CH 250V 5.5A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP6N25 is an N-Channel MOSFET from the QFET® series. This through-hole TO-220-3 packaged device features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous drain current (Id) of 5.5 A at 25°C. The on-resistance (Rds On) is a maximum of 1 Ohm at 2.75 A and 10 V gate drive. Key parameters include a maximum power dissipation of 63 W (Tc), input capacitance (Ciss) of 300 pF @ 25 V, and gate charge (Qg) of 8.5 nC @ 10 V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply, industrial, and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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