FQP5N30
MOSFET N-CH 300V 5.4A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP5N30 is an N-Channel QFET® series power MOSFET designed for high-performance applications. This component offers a 300V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.4A at 25°C. With a maximum power dissipation of 70W (Tc), it is suitable for demanding power management tasks. The FQP5N30 features a low gate charge of 13 nC at 10V and input capacitance of 430 pF at 25V, facilitating efficient switching. Its on-resistance (Rds On) is rated at a maximum of 900 mOhm at 2.7A and 10V. The device is housed in a standard TO-220-3 package for through-hole mounting, ensuring robust thermal performance across an operating temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and general-purpose switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |