FQP55N06
MOSFET N-CH 60V 55A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP55N06 is an N-Channel Power MOSFET from the QFET® series. This component offers a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 55A at 25°C (Tc). Featuring low on-resistance (Rds On) of 20mOhm maximum at 27.5A, 10V, the FQP55N06 is designed for efficient power switching applications. Its maximum power dissipation is 133W (Tc) with a junction temperature range of -55°C to 175°C. The device is packaged in a standard TO-220-3 through-hole configuration. Key parameters include a gate charge (Qg) of 46 nC maximum at 10 V and input capacitance (Ciss) of 1690 pF maximum at 25 V. This MOSFET is suitable for use in power supplies, motor control, and general-purpose power switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 133W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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