FQP4N90
MOSFET N-CH 900V 4.2A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP4N90 is a QFET® series N-channel power MOSFET designed for high-voltage applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 900 V and a continuous drain current (Id) of 4.2 A at 25°C, with a maximum power dissipation of 140 W. The Rds On is specified at 3.3 Ohm maximum at 2.1 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 30 nC maximum and input capacitance (Ciss) of 1100 pF maximum. Operating within a temperature range of -55°C to 150°C, this MOSFET is housed in a TO-220-3 package. It is commonly utilized in power supply units, AC-DC converters, and lighting control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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