FQP4N25
MOSFET N-CH 250V 3.6A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP4N25 is a high-performance N-Channel Power MOSFET from the QFET® series. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 3.6A at 25°C. With a maximum power dissipation of 52W (Tc) and a low Rds On of 1.75 Ohms at 1.8A and 10V, it is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 5.6 nC at 10V and an Input Capacitance (Ciss) of 200 pF at 25V. The operating temperature range is -55°C to 150°C. The TO-220-3 package is ideal for power switching applications in industries such as consumer electronics and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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