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FQP4N25

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FQP4N25

MOSFET N-CH 250V 3.6A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FQP4N25 is a high-performance N-Channel Power MOSFET from the QFET® series. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 3.6A at 25°C. With a maximum power dissipation of 52W (Tc) and a low Rds On of 1.75 Ohms at 1.8A and 10V, it is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 5.6 nC at 10V and an Input Capacitance (Ciss) of 200 pF at 25V. The operating temperature range is -55°C to 150°C. The TO-220-3 package is ideal for power switching applications in industries such as consumer electronics and industrial automation.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Rds On (Max) @ Id, Vgs1.75Ohm @ 1.8A, 10V
FET Feature-
Power Dissipation (Max)52W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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