FQP44N08
MOSFET N-CH 80V 44A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP44N08, a QFET® series N-Channel power MOSFET, offers an 80V drain-source voltage and a continuous drain current of 44A at 25°C. This through-hole TO-220-3 packaged component features a low on-resistance of 34mOhm at 22A and 10V Vgs. With a maximum power dissipation of 127W at 25°C (Tc) and a gate charge of 50nC at 10V, it is suitable for applications requiring efficient power switching. The operating temperature range is -55°C to 175°C (TJ). This device is utilized in industrial automation, power supply, and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 127W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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