FQP3N90
MOSFET N-CH 900V 3.6A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP3N90 is a QFET® series N-Channel Power MOSFET designed for high voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 3.6A at 25°C. With a maximum power dissipation of 130W at 25°C (Tc), it features a low on-resistance (Rds On) of 4.25 Ohms at 1.8A and 10V gate drive. The FQP3N90 is housed in a TO-220-3 through-hole package, suitable for applications requiring robust high-voltage switching. Key parameters include a gate charge (Qg) of 26 nC at 10V and an input capacitance (Ciss) of 910 pF at 25V. This device is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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