FQP3N60
MOSFET N-CH 600V 3A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP3N60 is a QFET® series N-Channel Power MOSFET featuring a 600V drain-to-source voltage (Vdss). This through-hole component, packaged in a TO-220-3, offers a continuous drain current (Id) of 3A at 25°C and a maximum power dissipation of 75W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 3.6 Ohms at 1.5A and 10V gate-source voltage (Vgs). The device exhibits a typical gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 450 pF at 25V. It operates within an extended temperature range of -55°C to 150°C (TJ) and supports a maximum Vgs of ±30V. This MOSFET is suitable for applications in power supply units and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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