FQP32N12V2
MOSFET N-CH 120V 32A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP32N12V2 is an N-Channel Power MOSFET from the QFET® series. This device features a Drain-Source Voltage (Vdss) of 120V and a continuous Drain Current (Id) of 32A at 25°C. The on-resistance (Rds On) is specified as a maximum of 50mOhm at 16A and 10V gate drive. With a maximum power dissipation of 150W (Tc), it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 53 nC (max) at 10V and input capacitance (Ciss) of 1860 pF (max) at 25V. The device operates over a temperature range of -55°C to 175°C (TJ). Housed in a standard TO-220-3 package with through-hole mounting, this MOSFET is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
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