FQP2N80
MOSFET N-CH 800V 2.4A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQP2N80 is an N-Channel MOSFET from the QFET® series. This through-hole component features a Drain to Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 2.4 A at 25°C. The Rds On is a maximum of 6.3 Ohms at 1.2 A and 10 V gate drive. With a maximum power dissipation of 85 W at the case temperature, this TO-220-3 packaged device offers a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 550 pF. It operates within a temperature range of -55°C to 150°C. Applications include power supply units and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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