FQP2N50
MOSFET N-CH 500V 2.1A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP2N50 is an N-Channel Power MOSFET from the QFET® series, designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 2.1A at 25°C, with a maximum power dissipation of 55W (Tc). The device offers a low on-resistance (Rds On) of 5.3Ohm at 1.05A and 10V gate drive. Key parameters include a gate charge (Qg) of 8 nC and input capacitance (Ciss) of 230 pF. The FQP2N50 is housed in a standard TO-220-3 through-hole package, suitable for applications in power supplies, lighting, and motor control. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 1.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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