FQP19N10L
MOSFET N-CH 100V 19A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP19N10L is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) of 19A at 25°C. The device offers a maximum On-Resistance (Rds On) of 100mOhm at 9.5A and 10V Vgs. With a maximum power dissipation of 75W (Tc), it is designed for through-hole mounting in a TO-220-3 package. Key electrical characteristics include a gate charge of 18 nC at 5V and input capacitance of 870 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in power supply and motor control circuits.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |