FQP18N50V2
MOSFET N-CH 500V 18A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's QFET® series FQP18N50V2 is a 500V N-Channel MOSFET designed for high-performance applications. This through-hole component features a continuous drain current (Id) of 18A at 25°C and a maximum power dissipation of 208W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 500V, a maximum on-resistance (Rds On) of 265mOhm at 9A and 10V, and a gate charge (Qg) of 55 nC at 10V. The input capacitance (Ciss) is 3290 pF at 25V, and the gate-source voltage (Vgs) maximum is ±30V, with a threshold voltage (Vgs(th)) of 5V at 250µA. Operating across a wide temperature range from -55°C to 150°C (TJ), this TO-220-3 packaged device is suitable for power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 265mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
