FQP13N06
MOSFET N-CH 60V 13A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FQP13N06 is a QFET® series N-Channel MOSFET. This through-hole component features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 13 A at 25°C. The device offers a maximum on-resistance (Rds On) of 135 mOhm at 6.5 A and 10 V gate-source voltage (Vgs). It has a maximum gate charge (Qg) of 7.5 nC at 10 V and an input capacitance (Ciss) of 310 pF at 25 V. With a maximum power dissipation of 45 W and an operating temperature range of -55°C to 175°C, this TO-220-3 packaged device is suitable for applications in power supply and industrial control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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