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FQP12N60

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FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's QFET® series FQP12N60 is a 600V N-Channel MOSFET designed for demanding power applications. This through-hole TO-220-3 packaged device offers a continuous drain current of 10.5A (Tc) and a maximum power dissipation of 180W (Tc). Key electrical parameters include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 700mOhm at 5.3A and 10V, and a gate charge (Qg) of 54 nC at 10V. Input capacitance (Ciss) is rated at 1900 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supplies, motor control, and lighting applications.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 25 V

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