FQP12N60
MOSFET N-CH 600V 10.5A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQP12N60 is a 600V N-Channel MOSFET designed for demanding power applications. This through-hole TO-220-3 packaged device offers a continuous drain current of 10.5A (Tc) and a maximum power dissipation of 180W (Tc). Key electrical parameters include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 700mOhm at 5.3A and 10V, and a gate charge (Qg) of 54 nC at 10V. Input capacitance (Ciss) is rated at 1900 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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