FQP11N40
MOSFET N-CH 400V 11.4A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQP11N40 is an N-Channel Power MOSFET from the QFET® series. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 11.4A at 25°C, with a maximum power dissipation of 147W. The device exhibits a typical Rds On of 480mOhm at 5.7A and 10V gate drive, and a gate charge (Qg) of 35nC at 10V. Input capacitance (Ciss) is 1400pF at 25V. The FQP11N40 is packaged in a TO-220-3 through-hole configuration, suitable for applications in power supply units and industrial automation. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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