FQL50N40
MOSFET N-CH 400V 50A TO264-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQL50N40 is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 50A at 25°C. The low on-resistance, specified at 75mOhm maximum at 25A and 10V, minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 210 nC maximum at 10V and an Input Capacitance (Ciss) of 7500 pF maximum at 25V. With a maximum power dissipation of 460W at 25°C, this device is housed in a TO-264-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is widely utilized in power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | HPM F2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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