FQI9N50CTU
MOSFET N-CH 500V 9A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel MOSFET, part number FQI9N50CTU, is a high-performance discrete semiconductor designed for demanding applications. This TO-262 (I2PAK) packaged component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C. With a maximum power dissipation of 135W (Tc) and a low on-resistance (Rds On) of 800mOhm at 4.5A and 10V gate drive, it ensures efficient power transfer. Key characteristics include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 1030 pF at 25V. The FQI9N50CTU operates across a wide temperature range of -55°C to 150°C (TJ). This component is widely utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
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