FQI9N25CTU
MOSFET N-CH 250V 8.8A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQI9N25CTU is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.8A at 25°C (Tc). With a typical Rds(on) of 430mOhm at 4.4A and 10V Vgs, it minimizes conduction losses. The device features a low gate charge of 35 nC at 10V, contributing to reduced switching losses. Maximum power dissipation is rated at 74W (Tc) and 3.13W (Ta). The TO-262 (I2PAK) package with through-hole mounting facilitates integration into various board designs. This MOSFET is suitable for applications in power supplies, motor control, and lighting systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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