FQI7P06TU
MOSFET P-CH 60V 7A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series MOSFET, part number FQI7P06TU, is a P-Channel device featuring a 60V drain-to-source voltage. This through-hole component is housed in a TO-262 (I2PAK) package with long leads, offering a continuous drain current of 7A at 25°C (Tc). Key electrical characteristics include a maximum Rds On of 410mOhm at 3.5A and 10V, and a gate charge (Qg) of 8.2 nC at 10V. The input capacitance (Ciss) is a maximum of 295 pF at 25V. Power dissipation is rated at 3.75W (Ta) and 45W (Tc). The operating temperature range is from -55°C to 175°C (TJ), with a maximum gate-source voltage of ±25V and a threshold voltage (Vgs(th)) of 4V at 250µA. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |