FQI7N10LTU
MOSFET N-CH 100V 7.3A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-Channel Power MOSFET, part number FQI7N10LTU. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 7.3A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 350 mOhm at 3.65A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 6 nC (max) at 5V Vgs and input capacitance (Ciss) of 290 pF (max) at 25V Vds. The device supports gate drive voltages from 5V to 10V and has a maximum Vgs of ±20V. It is packaged in a TO-262 (I2PAK) through-hole configuration with a maximum power dissipation of 40W at 25°C (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V |
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