FQI6N60CTU
MOSFET N-CH 600V 5.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQI6N60CTU is a QFET® series N-Channel Power MOSFET designed for high-voltage switching applications. This component features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5.5A at 25°C, with a power dissipation of 125W at the same temperature. The device exhibits a maximum on-resistance (Rds On) of 2 Ohms at 2.75A and 10V gate drive. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 810 pF at 25V. The FQI6N60CTU is housed in a TO-262 (I2PAK) through-hole package, suitable for mounting in industrial and consumer electronics, power supplies, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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