FQI6N50TU
MOSFET N-CH 500V 5.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel Power MOSFET, FQI6N50TU, offers a 500V drain-source voltage and continuous drain current of 5.5A at 25°C (Tc). This device features a maximum on-resistance of 1.3Ohm at 2.8A, 10V gate-source voltage, and an input capacitance (Ciss) of 790pF (max) at 25V. With a gate charge (Qg) of 22nC (max) at 10V, it is suitable for applications requiring efficient switching. The FQI6N50TU is housed in a TO-262 (I2PAK) package, supporting through-hole mounting. Its power dissipation capabilities include 3.13W (Ta) and 130W (Tc), operating within a temperature range of -55°C to 150°C (TJ). This component finds utility in power supply units, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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