FQI5N80TU
MOSFET N-CH 800V 4.8A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQI5N80TU is an N-Channel Power MOSFET from the QFET® series. This component offers a 800V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C (Tc). The device features low on-resistance, with a maximum Rds(On) of 2.6 Ohms at 2.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 33 nC (max) at 10V and input capacitance (Ciss) of 1250 pF (max) at 25V. Maximum power dissipation is rated at 140W (Tc) and 3.13W (Ta). The FQI5N80TU is housed in a TO-262 (I2PAK) package with through-hole mounting. This component is suitable for applications in power supply, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 25 V |
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