FQI5N20TU
MOSFET N-CH 200V 4.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI5N20TU is a QFET® series N-Channel Power MOSFET. This device offers a 200V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2 Ohms at 2.25A and 10V Vgs, it is suitable for high-efficiency switching applications. The FQI5N20TU features a gate charge (Qg) of 7.5 nC at 10V and input capacitance (Ciss) of 270 pF at 25V. Power dissipation reaches 52W (Tc) and 3.13W (Ta). Packaged in a TO-262-3 Long Leads (I2PAK) configuration for through-hole mounting, this MOSFET operates across industrial temperature ranges from -55°C to 150°C (TJ). Its robust construction and performance characteristics make it a reliable choice for power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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