FQI5N15TU
MOSFET N-CH 150V 5.4A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI5N15TU is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 5.4A at 25°C (Tc). With a maximum on-resistance (Rds On) of 800mOhm at 2.7A and 10V gate-source voltage, it offers efficient power switching. The device is housed in a TO-262 (I2PAK) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 7nC (max) at 10V and an input capacitance (Ciss) of 230pF (max) at 25V. Power dissipation capabilities are rated at 3.75W (Ta) and 54W (Tc). This MOSFET is utilized in various industrial sectors, including power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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