FQI47P06TU
MOSFET P-CH 60V 47A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor P-Channel MOSFET, QFET® series, FQI47P06TU. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C (Tc). With a low on-resistance of 26mOhm maximum at 23.5A and 10V gate-source voltage, it offers efficient power handling. The FQI47P06TU is housed in a TO-262 (I2PAK) package suitable for through-hole mounting. Key parameters include a gate charge of 110nC (max) at 10V and input capacitance of 3600pF (max) at 25V. Maximum power dissipation is specified at 3.75W (Ta) and 160W (Tc). This component is utilized in demanding applications across industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 23.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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