FQI3N30TU
MOSFET N-CH 300V 3.2A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI3N30TU is a QFET® series N-Channel Power MOSFET. This device features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.2Ohm at 1.6A and 10V gate-source voltage, it offers efficient switching. The MOSFET is packaged in a TO-262-3 Long Leads (I2PAK) for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 7nC (max) at 10V and input capacitance (Ciss) of 230pF (max) at 25V. Maximum power dissipation is rated at 3.13W (Ta) and 55W (Tc). This component is suitable for applications in power supply, motor control, and lighting systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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