FQI32N20CTU
MOSFET N-CH 200V 28A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel MOSFET, part number FQI32N20CTU, provides a 200V drain-source breakdown voltage and a continuous drain current of 28A at 25°C case temperature. This device features a low on-resistance of 82mOhm maximum at 14A and 10V Vgs. With a gate charge of 110 nC maximum at 10V and input capacitance of 2220 pF maximum at 25V, it is designed for efficient switching applications. The FQI32N20CTU is housed in a TO-262 (I2PAK) package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 3.13W ambient and 156W case temperature. This component is utilized in various industrial and power control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2220 pF @ 25 V |
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