FQI32N12V2TU
MOSFET N-CH 120V 32A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's QFET® series FQI32N12V2TU is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 120V and a continuous drain current (Id) capability of 32A at 25°C (Tc). With a low on-resistance (Rds On) of 50mOhm at 16A and 10V Vgs, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 53nC at 10V and input capacitance (Ciss) of 1860pF at 25V. The MOSFET offers high power dissipation capabilities, rated at 150W (Tc) and 3.75W (Ta). Packaged in a TO-262-3 Long Leads (I2PAK) for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C (TJ). This component finds utility in power supply units, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
