FQI2N90TU
MOSFET N-CH 900V 2.2A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI2N90TU is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 2.2A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 7.2 Ohms at 1.1A and 10V gate drive. Key parameters include input capacitance (Ciss) of 500pF (max) at 25V and gate charge (Qg) of 15nC (max) at 10V. Power dissipation is rated at 3.13W (Ta) and 85W (Tc). The FQI2N90TU is housed in a TO-262 (I2PAK) package with through-hole mounting. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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