FQI2N80TU
MOSFET N-CH 800V 2.4A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-Channel Power MOSFET, part number FQI2N80TU. This device features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 2.4 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 6.3 Ohms at 900 mA and 10 V, it offers efficient switching. The MOSFET is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package for through-hole mounting. Key characteristics include a gate charge (Qg) of 15 nC at 10 V and input capacitance (Ciss) of 550 pF at 25 V. Power dissipation is rated at 3.13 W (Ta) and 85 W (Tc). This component is suitable for applications in power supplies, lighting, and motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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