FQI19N20TU
MOSFET N-CH 200V 19.4A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-Channel Power MOSFET, part number FQI19N20TU. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 19.4A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 150mOhm at 9.7A and 10V gate drive. Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 1600 pF maximum at 25V. Power dissipation is rated at 3.13W (Ta) and 140W (Tc). The FQI19N20TU is housed in a TO-262-3 Long Leads / I2PAK package and supports through-hole mounting. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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