FQI17N08LTU
MOSFET N-CH 80V 16.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI17N08LTU is an N-Channel Power MOSFET from the QFET® series. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 16.5A at 25°C (Tc). The Rds On is specified at a maximum of 100mOhm at 8.25A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 11.5 nC at 5V and input capacitance (Ciss) of 520 pF at 25V. The MOSFET offers a maximum power dissipation of 65W (Tc) and 3.75W (Ta). It is packaged in a TO-262-3 Long Leads (I2PAK) and designed for through-hole mounting. This component is suitable for applications in power supply units, motor control, and industrial automation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |