FQI16N25CTU
MOSFET N-CH 250V 15.6A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQI16N25CTU, a QFET® series N-Channel MOSFET, offers a 250V drain-source voltage and a continuous drain current of 15.6A at 25°C (Tc). This component features a maximum on-resistance of 270mOhm at 7.8A and 10V gate-source voltage. With a gate charge of 53.5 nC (max) at 10V and input capacitance of 1080 pF (max) at 25V, it is designed for efficient switching. The device supports a 10V drive voltage and has a ±30V maximum gate-source voltage. Power dissipation is rated at 3.13W (Ta) and 139W (Tc). The FQI16N25CTU is housed in a TO-262 (I2PAK) package with long leads, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in power supply, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 53.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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