FQI13N06TU
MOSFET N-CH 60V 13A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQI13N06TU is an N-Channel Power MOSFET designed for robust performance. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum on-resistance (Rds On) of 135mOhm at 6.5A and 10V, it offers efficient power handling. The FQI13N06TU supports a gate-source voltage (Vgs) range of ±25V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 7.5 nC at 10V and input capacitance (Ciss) of 310 pF at 25V. The device is packaged in a TO-262-3 Long Leads (I2PAK) format suitable for through-hole mounting. Power dissipation is rated at 45W (Tc) and 3.75W (Ta). This MOSFET is commonly utilized in industrial and automotive power management applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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