FQI13N06LTU
MOSFET N-CH 60V 13.6A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQI13N06LTU is an N-Channel Power MOSFET from the QFET® series. This component features a 60V drain-to-source voltage and a continuous drain current of 13.6A at 25°C (Tc). With a maximum on-resistance of 110mOhm at 6.8A and 10V Vgs, it offers efficient switching characteristics. The device is housed in a TO-262 (I2PAK) package with through-hole mounting. Key parameters include a gate charge of 6.4 nC and input capacitance of 350 pF. Power dissipation is rated at 3.75W (Ta) and 45W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications across industrial and consumer electronics sectors requiring robust power switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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